Simultaneous determination of indium and nitrogen contents of InGaAsN quantum wells by optical in situ monitoring

Comparison of H2 and N2 as carrier gas in MOVPE growth of InGaAsN quantum wells

Differences in sample quality and nitrogen incorporation in InGaAsN quantum well samples grown by metal-organic vapor phase epitaxy using either H2 or N2 as the carrier gas are studied by several ex situ methods. The nitrogen incorporation increases while the indium content and the growth rate of the quantum wells decrease when using N2 as the carrier gas instead of H2. Also, the hydrogen incor...

In situ determination of nitrogen content in InGaAsN quantum wells

Molecular Beam Epitaxy of Ga(In)AsN/GaAs Quantum Wells towards 1.3μm and 1.55μm

 In this article, we report an attempt of extending the InGaAsN materials towards 1.3μm and 1.55μm wavelength. All these InGaAsN samples are grown in a plasma-assisted solid-source molecular-beam epitaxy (SSMBE) system. Our experiments revealed that the nitrides could be grown with both direct nitrogen beam and dispersive nitrogen. The nitrogen incorporation rate could be reduced by the presen...

Title: In situ determination of nitrogen content in InGaAsN quantum wells

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Strong Optical Filed Intensity Improvement Introducing InGaAsP Quantum Wells in InP Nanocavity

This paper presents the optical characteristics of a quantum well doped InP nanocavity.The resonance wavelength of the nanocavity and the optical field intensity is calculated before and after presence of the quantum wells. The resulting huge filed intensity of about 1.2×108 respect to the incident field is the effect of quantum wells placed in vicinity of center of nanocavity.